BDX67B
Description
High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BDX67B
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 209.33 KB
Datasheets by Manufacturer
- BDX67B — SavantIC — SILICON POWER TRANSISTOR
- BDX67B — Comset Semiconductors — NPN SILICON DARLINGTONS POWER TRANSISTOR
- BDX67B — Seme LAB — NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
- BDX67 — Seme LAB — NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
- BDX67C — Seme LAB — NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
- BDX67C — SavantIC — SILICON POWER TRANSISTOR
- BDX67 — SavantIC — SILICON POWER TRANSISTOR
- BDX67 — Comset Semiconductors — NPN SILICON DARLINGTONS POWER TRANSISTOR
- BDX67C — Comset Semiconductors — NPN SILICON DARLINGTONS POWER TRANSISTOR
- BDX68C — Seme LAB — PNP DARLINGTON POWER TRANSISTOR