Datasheet Details
| Part number | BDY75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.48 KB |
| Description | NPN Transistor |
| Datasheet | BDY75-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY75 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.48 KB |
| Description | NPN Transistor |
| Datasheet | BDY75-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.8 ℃/W BDY75 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY75 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
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