BDY75 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY75 TC=25℃ unless otherwise specified...