Datasheet Details
| Part number | BDY78 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | NPN Transistor |
| Datasheet | BDY78-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BDY78.
| Part number | BDY78 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | NPN Transistor |
| Datasheet | BDY78-INCHANGE.pdf |
|
|
|
·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY78 | Bipolar NPN Device | Seme LAB |
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|---|---|
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