| Part number | BDY95 |
|---|---|
| Datasheet | BDY95-INCHANGE.pdf |
| File Size | 198.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY95 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY90 | NPN Transistor |
| BDY90A | NPN Transistor |
| BDY91 | NPN Transistor |
| BDY92 | NPN Transistor |
| BDY93 | NPN Transistor |
| BDY94 | NPN Transistor |
| BDY96 | NPN Transistor |
| BDY97 | NPN Transistor |
| BDY98 | NPN Transistor |
| BDY99 | NPN Transistor |
