BDY95
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BDY95
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 198.40 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| BDY93 | Seme LAB | Bipolar NPN Device |
| BDY94 | Seme LAB | Bipolar NPN Device |
| BDY97 | Seme LAB | Bipolar NPN Device |
| BDY98 | Seme | Bipolar NPN Device |
| BDY96 | Seme | Bipolar NPN Device |
| BDY90 | Seme LAB | NPN SILICON TRANSISTOR |