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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ·High Gain ︱S21︱2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
BFP196W
VALUE 20 12 2 100 700 150
-65~150
UNIT V V V mA
mW ℃ ℃
isc website:www.iscsemi.