BFP196W
BFP196W is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low noise, low distortion broadband amplifiers in antenna and telemunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
- Power amplifier for DECT and PCN systems
- fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
- Pb-free (RoHS pliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP196W
Marking
Pin Configuration
RIs 1 = E 2 = C 3 = E 4 = B
- -
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage...
