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Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFP193W
3
4
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP193W
Marking
Pin Configuration
RCs 1 = E 2 = C 3 = E 4 = B -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 66°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 80 10 580
150 -55
BFP193W Datasheet
