BFP193W
BFP193W is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain amplifiers up to 2 GHz
- For linear broadband amplifiers
- f T = 8 GHz, NFmin = 1 d B at 900 MHz
- Pb-free (Ro HS pliant) package
- Qualification report according to AEC-Q101 available
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP193W
Marking
Pin Configuration
RCs 1 = E 2 = C 3 = E 4 = B
- -
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 66°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 80 10 580
150 -55 ... 150
Unit V m A m W °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction
- soldering...
