BFP193W Datasheet and Specifications PDF

The BFP193W is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins4
Max Operating Temp150 °C
Min Operating Temp-55 °C
🏠
Part NumberBFP193W Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Q. r the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP193W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC .
Part NumberBFP193W Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, o. acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V,.

Price & Availability

Seller Inventory Price Breaks Buy
Newark 2800 5+ : 0.321 USD
10+ : 0.231 USD
25+ : 0.209 USD
50+ : 0.197 USD		 View Offer
DigiKey 49812 1+ : 0.28 USD
10+ : 0.19 USD
25+ : 0.168 USD
100+ : 0.1442 USD		 View Offer
DigiKey 49812 1+ : 0.28 USD
10+ : 0.19 USD
25+ : 0.168 USD
100+ : 0.1442 USD		 View Offer

Similar Datasheets

Part Number Manufacturer Description
BFP193TW Vishay Silicon NPN Planar RF Transistor
BFP193TRW Vishay Silicon NPN Planar RF Transistor
BFP193 Infineon Low Noise Silicon Bipolar RF Transistor
BFP193T Vishay Silicon NPN Planar RF Transistor
BFP193 Siemens Semiconductor Group NPN Silicon RF Transistor