BFP193 Datasheet | Siemens Semiconductor Group

BFP 193 NPN Silicon RF Transistor - For low noise, high-gain amplifiers up to 2GHz - For linear broadband amplifiers - f T = 8GHz F = 1.3d B at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 m W 580 150 - 65 ... + 150 - 65 ... + 150 ≤ 135 °C m A Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 72 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Dec-13-1996 BFP 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 n A 100 µA 1 50 200 IC = 1 m A, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO h FE VCE = 20 V, VBE =...