BFP193 Datasheet | Infineon

Low Noise Silicon Bipolar RF Transistor - For low noise, high-gain amplifiers up to 2 GHz - For linear broadband amplifiers - f T = 8 GHz, NFmin = 1 d B at 900 MHz - Pb-free (Ro HS pliant) package - Qualification report according to AEC-Q101 available 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP193 Marking Pin Configuration RCs 1 = C 2 = E 3 = B 4 = E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 72°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 80 10 580 150 -55 ... 150 Unit V m A m W °C Thermal Resistance Parameter Symbol Value Unit Junction...