The BFP196W is a NPN Silicon RF Transistor.
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Frequency | 7.5 GHz |
| Height | 900 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Part Number | BFP196W Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier. 6 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE. |
| Part Number | BFP196W Datasheet |
|---|---|
| Description | Low Noise Silicon Bipolar RF Transistor |
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power a. V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 115 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 B. |
| Part Number | BFP196W Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ·High Gain ︱S21︱2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable.
; IE= 0
hFE
DC Current Gain
IC= 30mA ; VCE= 6V
fT
Current-Gain *Bandwidth Product IC= 30mA ; VCE= 8V Cre Feedback Capacitance IE= 0 ; VCB= 6V; f= 1MHz Ce Emitter capacitance IC=iC=0; VEB=0.5V; f=1MHz CC Collector capacitance IE=ie=0; VCB=8V; f=1MHz ︱S21︱2 Insertion Power Gain IC= 30m. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFP196 | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFP196 | Siemens Semiconductor Group | NPN Silicon RF Transistor |