Datasheet Details
| Part number | BU800 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | NPN Transistor |
| Datasheet | BU800-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU800 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | NPN Transistor |
| Datasheet | BU800-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU800 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
| Part Number | Description |
|---|---|
| BU806 | Silicon NPN Darlington Power Transistor |
| BU806F | NPN Transistor |
| BU806FI | NPN Transistor |
| BU807F | NPN Transistor |
| BU807FI | NPN Transistor |
| BU826 | Silicon NPN Darlington Power Transistor |
| BU826A | Silicon NPN Darlington Power Transistor |