Datasheet Details
| Part number | BU826A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.06 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | BU826A-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor BU826A.
| Part number | BU826A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.06 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | BU826A-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage(VBE= 0) 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BU826A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 55mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A;
| Part Number | Description |
|---|---|
| BU826 | Silicon NPN Darlington Power Transistor |
| BU800 | NPN Transistor |
| BU806 | Silicon NPN Darlington Power Transistor |
| BU806F | NPN Transistor |
| BU806FI | NPN Transistor |
| BU807F | NPN Transistor |
| BU807FI | NPN Transistor |