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BU931R Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 450 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 15 ICM Collector Current-peak 30 IB Base Current 1 IBM Base Current-peak 5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 150 Tstg Storage Temperature Range -40~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BU931R isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU931R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

BU931R Distributor