BUT56AF - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) High Speed Switching High Power Dissipation With TO-220Fa Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switc

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Datasheet Details

Part number	BUT56AF
Manufacturer	Inchange Semiconductor
File Size	209.76 KB
Description	NPN Transistor
Datasheet	BUT56AF Datasheet

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isc Silicon NPN Power Transistor BUT56AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·High Power Dissipation ·With TO-220Fa Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.