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BUT56AF Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BUT56AF.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·High Power Dissipation ·With TO-220Fa Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUT56AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

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