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BUT56A
NPN
EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE
SC-65
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-EmitterVoltage Emitter-Base voltage Collector Current (DC) Collector Peck Current Base Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Rating 1000 450 6 8 10 4 100 150 -65~150
Unit V V V A A A W °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic Collector Cutoff Current (VBE=0) Emitter Cutoff Current(IC=0) Collector Emitter Saturation Voltage Base- Emitter Saturation Voltage Current Gain Bandwith Product Turn-Off Time
Symbol ICES IEBO VCE(sat) VBE(sat) fT toff
Test Condition VCE= 800V , VEB= 0 VEB= 6