BUT56 Overview
Description
With TO-220C package - High voltage;high speed - High power dissipation APPLICATIONS - Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5V CONDITIONS BUT56 BUT56A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 5.0 2.0 1.0 2.0 1.0 2.0 15 5.5 4 10 MHz 45 V V V V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUT56 BUT56A ICES Collector cut-off current mA hFE-1 DC current gain Switching times toff tf Turn-off time Fall time 4 1 µs µs IC=4A ;IB1=-IB2=1.25A tp=20µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT56 BUT56A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3.
