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BUW41 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW41 450 VCEV Collector-Emitter Voltage VBE= -1.5V BUW41A 550 V BUW41B 650 BUW41 300 VCEO(SUS) Collector-Emitter Voltage BUW41A 350 V BUW41B 400 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BUW41/A/B isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUW41/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41 BUW41A IC= 50mA ;

BUW41 Distributor