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BUX48A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor BUX48A.

General Description

·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical.

They are particulary suited for line-operated swtchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 175 W 200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case isc website: www.iscsemi.com 1.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUX48A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

BUX48A Distributor