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BUX83 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX82 800 VCES Collector-Emitter Voltage V BUX83 1000 BUX82 400 VCEO Collector-Emitter Voltage V BUX83 450 VCER Collector-Emitter Voltage RBE= 50Ω BUX82 BUX83 500 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.65 ℃/W BUX82/83 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage BUX82 BUX83 BUX83 VCE(sat)-1 Collector-Emitter Saturation Voltage BUX82 BUX83 VCE(sat)-2 Collector-Emitter Saturation Voltage BUX82 BUX83 VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current BUX82 BUX83 IEBO Emitter Cutoff Current hFE DC Current Gain CONDITIONS IC= 50mA ;

IB= 0 IC= 4A;

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