Datasheet Details
| Part number | BUY54A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | NPN Transistor |
| Datasheet | BUY54A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUY54A.
| Part number | BUY54A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | NPN Transistor |
| Datasheet | BUY54A-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 45 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 8 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.17 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY54A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA;
IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A;
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