Datasheet Details
| Part number | BUY50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | NPN Transistor |
| Datasheet | BUY50-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUY50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.18 KB |
| Description | NPN Transistor |
| Datasheet | BUY50-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching circuits ·Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=45℃ Tj Junction Temperature 3 A 95 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W BUY50 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY50 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUY50 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUY51A | NPN Transistor |
| BUY53A | NPN Transistor |
| BUY54A | NPN Transistor |
| BUY12 | NPN Transistor |
| BUY18S | NPN Transistor |
| BUY20 | NPN Transistor |
| BUY21 | NPN Transistor |
| BUY22 | NPN Transistor |
| BUY23 | NPN Transistor |
| BUY29 | NPN Transistor |