BUY56 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at high

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Datasheet Details

Part number	BUY56
Manufacturer	Inchange Semiconductor
File Size	202.35 KB
Description	Silicon NPN Power Transistor
Datasheet	BUY56 Datasheet

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isc Silicon NPN Power Transistor BUY56 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.