Datasheet Details
| Part number | BUY55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.37 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUY55-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BUY55.
| Part number | BUY55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.37 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUY55-InchangeSemiconductor.pdf |
|
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· ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤75℃ Tj Junction Temperature 2 A 60 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.66 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY55 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUY55 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUY52A | Silicon NPN Power Transistor |
| BUY56 | Silicon NPN Power Transistor |
| BUY57 | Silicon NPN Power Transistor |
| BUY58 | Silicon NPN Power Transistor |
| BUY24 | Silicon NPN Power Transistor |