BUY57 - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general switching applications at higher outputs.

Inchange Semiconductor

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Datasheet Details

Part number	BUY57
Manufacturer	Inchange Semiconductor
File Size	202.82 KB
Description	Silicon NPN Power Transistor
Datasheet	BUY57 Datasheet
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isc Silicon NPN Power Transistor BUY57 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.

Published: Jun 26, 2016 |