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BUY58 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A APPLICATIONS

Designed for general switching applications at higher outputs.

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isc Silicon NPN Power Transistor BUY58 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.3V@ IC= 10A APPLICATIONS ·Designed for general switching applications at higher outputs.