Inchange Semiconductor BUZ64
N-Channel MOSFET
BUZ64 Specifications
- Drain-Source Resistance : 400mΩ
- Min Breakdown Voltage : 400V
- Terminals : 2
- Max Power Dissipation : 125W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | BUZ64 |
|---|---|
| Datasheet | BUZ64 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●11.5A, 400V●SOA is Power Dissipation Limited
●Nanosecond Switching Speeds
●Linear Transfer Characteristics
●High Input Impedance
●Majority Carrier Device
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 11.5 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W BUZ64 isc website： 1 isc & iscsemi is registered trademark isc N-Channel...