BUZ64 Datasheet | Inchange Semiconductor

FEATURES - 11.5A, 400V - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous@ TC=37℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W BUZ64 isc website：.iscsemi....