Datasheet Details
| Part number | D857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.24 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D857-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | D857 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.24 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D857-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB762 APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 40 W 150 ℃ -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD857 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
| Part Number | Description |
|---|---|
| D858 | Silicon NPN Power Transistor |