IPA60R199CP
Overview
- Static drain-source on-resistance: RDS(on) ≤0.199Ω
- High peak current capability
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IPA60R199CP |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 235.85 KB |
Datasheets by Manufacturer
- AP9563GH — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
- FCPF360N65S3R0L — onsemi — N-Channel MOSFET
- A2SHB — HAOHAI — N-Channel MOSFET