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IPD053N06N Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·.

Key Features

  • Static drain-source on-resistance: RDS(on)≤5.3mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo IPD053N06N Power-Transistor Infineon
Infineon Technologies Logo IPD053N06N3G OptiMOS Power-Transistor Infineon Technologies

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