IPD053N06N
IPD053N06N is Power-Transistor manufactured by Infineon.
Type
OptiMOSTM Power-Transistor
Features
- Optimized for high performance SMPS, e.g. sync. rec.
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS pliant
- Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 5.3 mW 45 A
32 nC 27 nC
PG-TO252-3
Type IPD053N06N
Package PG-TO252-3
Marking 053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
45 A 45
V GS=10 V, T C=25 °C, R thJA =50K/W
Pulsed...
