The IPD053N06N is a Power-Transistor.
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD053N06N Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for t.
* Optimized for high performance SMPS, e.g. sync. rec. * 100% avalanche tested * Superior thermal resistance * N-channel * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),. |
| Part Number | IPD053N06N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance: RDS(on)≤5.3mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Optimized for synchronous rectification *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr. |
| Seller | Inventory | Price Breaks | Buy |
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| Newark | 22615 | 5+ : 2.2 USD 10+ : 1.48 USD 25+ : 1.34 USD 50+ : 1.2 USD |
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| Chip One Stop | 4672 | 1+ : 0.527 USD 10+ : 204 JPY 50+ : 185 JPY 250000000+ : 83.3 JPY |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD053N06N3G | Infineon | OptiMOS Power-Transistor |