IPD053N06N3G
IPD053N06N3G is OptiMOS Power-Transistor manufactured by Infineon.
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Type
IPD053N06N3 G
OptiMOS(TM)3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications Type IPD053N06N3 G
Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A
Package Marking
PG-TO252-3 053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2)
V GS=10 V, T C=100 °C
Value 90 78 360 68 ±20
Unit A
Pulsed drain current3)...
