IPW50R399CP
Key Features
- Static drain-source on-resistance: RDS(on)≤399mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- High Peak Current Capability
- Part: IPW50R399CP
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 239.15 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW50R399CP | Infineon | Power-Transistor |