VBsemi Electronics IPW50R399CP
N-Channel 500V Super Junction Power MOSFET
| Part No. | IPW50R399CP |
|---|---|
| Datasheet | IPW50R399CP Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 500V Super Junction Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low Gate Charge Qg Results in Simple Drive Requirement Available● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Low RDS(on)
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Switch Mode Power Supply (SMPS)● Uninterruptible Power Supply
● High Speed Power Switching
● Hard Switched and High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig.
