Infineon Technologies IPW50R399CP
Power-Transistor
| Part No. | IPW50R399CP |
|---|---|
| Datasheet | IPW50R399CP Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Lowest figure-of-merit RON x Qg● Ultra low gate charge
● Extreme dv/dt rated
● High peak current capability
● Pb-free lead plating; RoHS compliant
● Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPW50R399CP 560 V 0.399 Ω 17 nC PG-TO24270 CoolMOS CP is designed for:
● Hard and soft switching SMPS topologies
● DCM PFC for Lamp Ballast
● PWM for Lamp Ballast, LCD & PDP TV Type IPW50R399CP Package PG-TO247 Marking 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M3 and M3.5 screws Rev.
