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IRF441 - N-Channel MOSFET

Key Features

  • VGS Rated at ±20V.
  • Silicon Gate for Fast Switching Speeds.
  • IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature.
  • Rugged.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF441 FEATURES ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A IDM Drain Current-Single Plused 32 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.