Inchange Semiconductor IRF460
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | IRF460 |
|---|---|
| Datasheet | IRF460 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Repetitive Avalanche Ratings●Dynamic dv/dt Rating
●Hermetically Sealed
●Simple Drive Requirements
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 21 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.42 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W IRF460 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Dr...