Inchange Semiconductor IRF530
N-Channel MOSFET Transistor
FEATURES
●Low RDS(on)●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 14 ID A Drain Current-continuous@ TC=100℃ 9 IDM Drain Current-Single Plused 56 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.58 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor...