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IRF530 Datasheet PDF

Inchange Semiconductor IRF530

N-Channel MOSFET Transistor

Part No. IRF530
Datasheet IRF530 Download
Manufacturer
Inchange Semiconductor
Description N-Channel MOSFET Transistor
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IRF530 datasheet page 1 preview

FEATURES

●Low RDS(on)
●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 14 ID A Drain Current-continuous@ TC=100℃ 9 IDM Drain Current-Single Plused 56 A PD Total Dissipation @TC=25℃ 79 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.58 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor...
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