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IRF541 Datasheet PDF

Inchange Semiconductor IRF541

N-Channel Mosfet Transistor

Part No. IRF541
Datasheet IRF541 Download
Manufacturer
Inchange Semiconductor
Description N-Channel Mosfet Transistor
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IRF541 datasheet page 1 preview

FEATURES

●Low RDS(on)
●VGS Rated at ±20V
●Silicon Gate for Fast Switching Speed
●Rugged
●Low Drive Requirements
●DESCRITION
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
●

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±20 V V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃
●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF541

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PAR...
IRF541 page 2 preview