Inchange Semiconductor IRF637
N-Channel Mosfet Transistor
| Part No. | IRF637 |
|---|---|
| Datasheet | IRF637 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current –ID=6.5A@ TC=25℃●Drain Source Voltage- : VDSS= 275V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.68Ω(Max)
●Nanosecond Switching Speed
●High Input Impedance
APPLICATIONS
●High current , high speed switching●Switch mode power supplies
●DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 275 ±20 V V Drain Current-continuous@ TC=25℃ 6.5 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF637●ELECTRICAL CHARAC...
