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IRLU9343 - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤105mΩ.
  • 175℃ Operating Junction Temperature.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·175℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Audio amplifier applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VDSS Drain-Source Voltage VALUE UNIT -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -20 A IDM Drain Current-Single Pulsed -60 A PD Total Dissipation @TC=25℃ 79 W Tj Tstg Operating Junction And Storage Temperature -40~175 ℃ ·THERMAL CHARACTERISTICS SYMBO L PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX UNIT 1.9 ℃/W IRLU9343 isc website：www.iscsemi.
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