IRLU9343-701PBF Datasheet | International Rectifier

Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options l Lead-Free l IRLR9343Pb F IRLU9343Pb F IRLU9343-701Pb F Key Parameters -55 93 150 31 175 V m: m: n C °C VDS RDS(ON) typ. @ VGS = -10V RDS(ON) typ. @ VGS = -4.5V Qg typ. TJ max I-Pak IRLU9343 I-Pak Leadform 701 IRLU9343-701 Refer to page 10 for package outline D-Pak IRLR9343 Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This Mos FET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this Mos FET are 175°C operating junction temperature and repetitive avalanche capability. These features bine to make this Mos FET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. -55 ±20 -20 -14 -60 79 39 0.53 -40 to + 175 - - - Units V A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Clamping Pressure W W/°C °C N h Thermal Resistance RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted) Junction-to-Ambient (free air) g Parameter Typ. Max. 1.9 50 110 Units °C/W g gj - - - - - - - - - Notes  through ‰ are on page...