IRLU9343-701 Datasheet | International Rectifier

Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options Key Parameters VDS -55 RDS(ON) typ. @ VGS = -10V RDS(ON) typ. @ VGS = -4.5V Qg typ. TJ max V m: m: n C °C D-Pak IRLR9343 I-Pak IRLU9343 I-Pak Leadform 701 S IRLU9343-701 Refer to page 10 for package outline Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This Mos FET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this Mos FET are 175°C operating junction temperature and repetitive avalanche capability. These features bine to make this Mos FET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation PD @TC = 100°C Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Clamping Pressure h Thermal Resistance Parameter RθJC...