IXFH48N65X2 - N-Channel MOSFET

Datasheet Summary

Features

With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	IXFH48N65X2
Manufacturer	INCHANGE
File Size	320.55 KB
Description	N-Channel MOSFET
Datasheet	IXFH48N65X2 Datasheet
Additional preview pages of the IXFH48N65X2 datasheet.

📁 Similar Datasheet

IXFH400N075T2 - Power MOSFET (IXYS Corporation)
IXFH40N30 - Power MOSFET (IXYS Corporation)
IXFH40N30Q - Power MOSFETs (IXYS)
IXFH40N50Q - Power MOSFET (IXYS Corporation)
IXFH40N50Q2 - Power MOSFET (IXYS Corporation)
IXFH40N85X - Power MOSFET (IXYS)
IXFH42N20 - Power MOSFET (IXYS Corporation)
IXFH42N50P2 - Power MOSFET (IXYS Corporation)
IXFH42N60P3 - Power MOSFET (IXYS Corporation)
IXFH42N65X2A - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXFH42N65X2A - N-Channel MOSFET
IXFH44N50P - N-Channel MOSFET
IXFH46N65X2 - N-Channel MOSFET
IXFH102N15T - N-Channel MOSFET
IXFH110N15T2 - N-Channel MOSFET
IXFH12N65X2 - N-Channel MOSFET
IXFH130N15X3 - N-Channel MOSFET
IXFH14N85X - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH48N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 48 A IDM Drain Current-Single Pulsed 96 A PD Total Dissipation 660 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.19 ℃/W isc website：www.iscsemi.

Published: Nov 2, 2020 |