IXTH96N20P - N-Channel MOSFET

Features

Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTH96N20P N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTH96N20P

Datasheet Details

Part number	IXTH96N20P
Manufacturer	Inchange Semiconductor
File Size	316.74 KB
Description	N-Channel MOSFET
Datasheet	IXTH96N20P Datasheet
Additional preview pages of the IXTH96N20P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Published: Nov 12, 2020 |