IXTH96N20P Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 6.0 g 5.0 g G S D (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTH96N20P Key Features
- easy to drive and to protect
- di/dt = 100 A/µs
- Source Tab
- Part: IXTH96N20P
- Manufacturer: IXYS
- Size: 239.95 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTH96N20P | N-Channel MOSFET |