IXTH96N20P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variatio

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO

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