Full PDF Text Transcription for IXTP4N80P (Reference)
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IXTP4N80P. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor IXTP4N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% av...
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4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.
IXTP4N80P Datasheet
