IXTP4N80P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTP4N80P
Manufacturer	Inchange Semiconductor
File Size	247.02 KB
Description	N-Channel MOSFET
Datasheet	IXTP4N80P Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTP4N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.

Published: Nov 16, 2020 |