Advance Technical Information PolarHVTM Power MOS.
IXYS
IXTP4N80P - Power MOSFET
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤.
INCHANGE
IXTP4N80P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP4N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltag.